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US 2026/0223725 A1Published application
Microelectronic structures including bridges
AssigneeIntel Corporation
InventorsOmkar G. Karhade, Xiaoxuan Sun, Nitin A. Deshpande, Sairam Agraharam
Life of this patent
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Abstract
Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.
Claims20
A microelectronic assembly, comprising:
- a substrate having a top side above a bottom side;
- conductive contacts above the top side of the substrate, each of the conductive contacts having a surface finish thereon, the surface finish having a width less than a width of corresponding ones of the conductive contacts, the surface finish comprising nickel;
- solder structures coupled to corresponding ones of the conductive contacts, the solder structures in contact with the surface finish;
- a surface insulation material around the conductive contacts, the surface finish and the solder structures;
- first conductive pillars coupled to corresponding ones of the solder structures;
- a bridge component coupled to a first subset of the first conductive pillars, the bridge component having through silicon vias (TSVs) therein;
- second conductive pillars coupled to corresponding ones of a second subset of the first conductive pillars, the second conductive pillars each having a width greater than a width of the corresponding ones of the second subset of the first conductive pillars, the second conductive pillars laterally spaced apart from the bridge component;
- a dielectric material around the bridge component and the second conductive pillars;
- a first microelectronic component over and coupled to the bridge component;
- a second microelectronic component over and coupled to the bridge component, the second microelectronic component laterally spaced apart from the first microelectronic component;
- and
- a metal support material over the first microelectronic component and the second microelectronic component.
9 more elements
A microelectronic assembly, comprising:
- a substrate having a top side above a bottom side;
- a first conductive contact and a second conductive contact above the top side of the substrate, the first conductive contact having a first layer comprising nickel thereon, the first layer comprising nickel having a width less than a width of the first conductive contact, and the second conductive contact having a second layer comprising nickel thereon, the second layer comprising nickel having a width less than a width of the second conductive contact;
- a first solder structure coupled to the first conductive contact, the first solder structure in contact with the first layer comprising nickel, and a second solder structure coupled to the second conductive contact, the second solder structure in contact with the second layer comprising nickel;
- a surface insulation material around the first conductive contact and the second conductive contact, around the first layer comprising nickel and the second layer comprising nickel, and around the first solder structure and the second solder structure;
- a first conductive structure coupled to the first solder structure, and a second conductive structure coupled to the second solder structure;
- a bridge component having a through silicon via (TSV) therein, the TSV coupled to the first conductive structure;
- a conductive pillar coupled to the second conductive structure, the conductive pillar having a width greater than a width of the second conductive structure, the conductive pillar laterally spaced apart from the bridge component;
- a dielectric material around the bridge component and the conductive pillar;
- a first microelectronic component over and coupled to the bridge component;
- a second microelectronic component over and coupled to the bridge component, the second microelectronic component laterally spaced apart from the first microelectronic component;
- and
- a metal material over the first microelectronic component and the second microelectronic component.
9 more elements
A method of fabricating a microelectronic assembly, the method comprising:
- providing a substrate having a top side above a bottom side;
- forming conductive contacts above the top side of the substrate, each of the conductive contacts having a surface finish thereon, the surface finish having a width less than a width of corresponding ones of the conductive contacts, the surface finish comprising nickel;
- forming solder structures coupled to corresponding ones of the conductive contacts, the solder structures in contact with the surface finish;
- forming a surface insulation material around the conductive contacts, the surface finish and the solder structures;
- forming first conductive pillars coupled to corresponding ones of the solder structures;
- coupling a bridge component to a first subset of the first conductive pillars, the bridge component having through silicon vias (TSVs) therein;
- forming second conductive pillars coupled to corresponding ones of a second subset of the first conductive pillars, the second conductive pillars each having a width greater than a width of the corresponding ones of the second subset of the first conductive pillars, the second conductive pillars laterally spaced apart from the bridge component;
- forming a dielectric material around the bridge component and the second conductive pillars;
- coupling a first microelectronic component to the bridge component, the first microelectronic component over the bridge component;
- coupling a second microelectronic component to the bridge component, the second microelectronic component over the bridge component, and the second microelectronic component laterally spaced apart from the first microelectronic component;
- and
- providing a metal support material over the first microelectronic component and the second microelectronic component.
9 more elements
Dependencies are inferred from the claim text.