Plasma processing system configured to deliver a pulsed voltage waveform

A plasma processing system comprising:

• a processing chamber defining a processing volume;
• a substrate support assembly disposed within the processing volume, the substrate support assembly comprising a radio frequency baseplate and a substrate support positioned on the radio frequency baseplate;
• a pulsed voltage source configured to generate a pulsed voltage waveform having a first frequency;
• a radio frequency source configured to generate a radio frequency waveform having a second frequency that is higher than the first frequency;
• a direct current voltage source configured to generate a direct current voltage wave form;
• and
• a junction box enclosure electrically coupling the pulsed voltage source and the direct current voltage source to a direct current conductor coupled to the substrate support, the junction box enclosure further electrically coupling the pulsed voltage source and the radio frequency source to a radio frequency conductor that is coupled to the radio frequency baseplate, the junction box enclosure comprising:
• a pulsed voltage filter circuit coupled between the radio frequency source and the radio frequency conductor, the pulsed voltage filter circuit operable to filter the pulsed voltage waveform;
• a radio frequency filter circuit coupled between the pulsed voltage source and the direct current conductor, the radio frequency filter circuit operable to filter the radio frequency waveform;
• a bias compensation module coupled between the radio frequency filter circuit and the direct current voltage source;
• and
• a compensator circuit configured to compensate for a parasitic capacitance generated by the bias compensation module.