US 2026/0219223 A1 · METAL-OXIDE SEMICONDUCTOR GAS SENSOR

Abstract

A method includes combining a solution of tin(IV) chloride with a processing solvent to form a mixed solution and performing a first mixing process to the mixed solution for a first predetermined time period at a first predetermined temperature. A hydrolysis process is performed to add water to the mixed solution and a second mixing process is performed to the mixed solution for a second predetermined time period at a second predetermined temperature. A concentration process is performed to the mixed solution to remove the processing solvent and a calcination process is performed to the mixed solution to remove the water from the mixed solution thereby converting the mixed solution from a gel to a solid.

Claims20

Dependent claims

A method comprising:

combining a solution of tin(IV) chloride with a processing solvent to form a mixed solution;
performing a first mixing process to the mixed solution for a first predetermined time period at a first predetermined temperature;
performing a hydrolysis process to add water to the mixed solution;
performing a second mixing process to the mixed solution for a second predetermined time period at a second predetermined temperature;
performing a concentration process to the mixed solution to remove the processing solvent;
and
performing a calcination process to the mixed solution to remove the water from the mixed solution thereby converting the mixed solution from a gel to a solid.

4 more elements

Dependencies are inferred from the claim text.

Metal-oxide semiconductor gas sensor

Life of this patent

Metal-oxide semiconductor gas sensor

Life of this patent

Abstract

Claims20