Temperature control apparatus, temperature control method, temperature control program, and wafer manufacturing apparatus

A temperature control method in a temperature control apparatus for an epitaxial growth apparatus, the epitaxial growth apparatus comprising:

• a chamber for housing an object to be measured;
• a plurality of heating units that heat an object to be measured through the chamber;
• a chamber window unit provided at a position of the chamber facing the object to be measured;
• a central temperature measurement unit positioned outside of the chamber window unit and measures a temperature at a central portion of the object to be measured through the chamber window unit;
• a peripheral temperature measurement unit positioned outside of the chamber window unit and measures the temperature of a peripheral portion of the object to be measured through the chamber window unit;
• an identification unit provided in the peripheral temperature measurement unit to identify a position of the peripheral portion of the object to be measured within the chamber,
• wherein the temperature control method comprises the steps of:
• adjusting a measurement direction of the peripheral temperature measurement unit based on identification results of the identification unit;
• calculating the central temperature of the object to be measured from a detection value of the central temperature measurement unit and calculating the peripheral temperature of the object to be measured from the detection value of the peripheral temperature measurement unit;
• and
• controlling outputs of the plurality of heating units based on both the central temperature and the peripheral temperature.

A computer-readable non-transitory storage medium storing a temperature control program for a temperature control apparatus of an epitaxial growth apparatus, the epitaxial growth apparatus comprising:

• a chamber for housing an object to be measured;
• a plurality of heating units that heat the object to be measured through the chamber;
• a chamber window unit provided at a position of the chamber facing the object to be measured;
• a central temperature measurement unit positioned outside of the chamber window unit and measures a temperature at a central portion of the object to be measured through the chamber window unit;
• a peripheral temperature measurement unit positioned outside of the chamber window unit and measures the temperature of the peripheral portion of the object to be measured through the chamber window unit;
• an identification unit provided in the peripheral temperature measurement unit to identify a position of the peripheral portion of the object to be measured within the chamber,
• the temperature control apparatus embodies functions of:
• adjusting a measurement direction of the peripheral temperature measurement unit based on identification results from the identification unit;
• calculating the central temperature of the object to be measured from a detection value of the central temperature measurement unit and calculating the peripheral temperature of the object to be measured from the detection value of the peripheral temperature measurement unit;
• and
• controlling outputs of the plurality of heating units based on both the central temperature and the peripheral temperature.

A wafer manufacturing apparatus comprising:

• a chamber of an epitaxial growth apparatus that houses a silicon wafer internally;
• a plurality of heating units that heat the silicon wafer through the chamber;
• a chamber window unit provided at a position of the chamber facing the silicon wafer;
• a central temperature measurement unit positioned outside of the chamber window unit and measures a temperature at a central portion of the silicon wafer through the chamber window unit;
• a peripheral temperature measurement unit positioned outside of the chamber window unit and measures the temperature of a peripheral portion of the silicon wafer through the chamber window unit;
• an identification unit provided in the peripheral temperature measurement unit to identify the position of the peripheral portion of the silicon wafer within the chamber;
• an adjustment unit that adjusts a measurement direction of the peripheral temperature measurement unit based on identification results from the identification unit;
• a calculation unit that calculates the temperature of the central portion of the silicon wafer from the detection value of the central temperature measurement unit and calculates the temperature of the peripheral portion of the silicon wafer from a detection value of the peripheral temperature measurement unit;
• an output control unit that controls outputs of the plurality of heating units based on both the central temperature and the peripheral temperature.