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US 2026/0218371 A1Published application
Tungsten-silicon-nitrogen sputtering target, assembly and method of making
AssigneeSolstice Advanced Materials US, Inc.
InventorsXiaodan Wu, Rashmi Mohanty
Life of this patent
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Abstract
A sputtering target assembly includes a WxSi100-x-yNy sputtering target wherein x is 40-65 at. % and y is 10-30 at. %, wherein the sputtering target has a density of at least 90% theoretical. A method of making a sputtering target assembly is also included.
Claims12
A process for manufacturing a sputtering target assembly, the method comprising:
- combining silicon powder, tungsten powder and silicon nitride powder to form a mixed powder;
- vacuum hot pressing the mixed powder at a temperature at or below 1400° C. to form a semi-sintered part;
- and
- hot isostatic pressing the semi-sintered part at a temperature of 1650° C. or greater and a pressure over 20 ksi to form a sputtering target having a composition WxSi100-x-yNy wherein x is 40-65 at. % and y is 10-30 at. %, and a density of at least 90% theoretical.
1 more element
A sputtering target assembly comprising:
- a WxSi100-x-yNy sputtering target wherein x is 40-65 at. % and y is 10-30 at. %, wherein the sputtering target has a density of at least 90% theoretical.
Dependencies are inferred from the claim text.