Method of manufacturing semiconductor device

Abstract

A method of manufacturing a semiconductor device is provided and includes steps: forming a first charge-trapping layer on a first oxide layer on a first wafer in a lot of wafers by a deposition process; obtaining a first uniformity profile of the first charge-trapping layer; determining a first feed forward compensation information of the first wafer based on at least one of the first uniformity profile and a target uniformity profile; selecting a first process recipe in multiple process recipes based on the first feed forward compensation information; and forming a second oxide layer, according to the first process recipe, by a first oxidation process that consumes a portion of the first charge-trapping layer.

Dependencies are inferred from the claim text.