Method of manufacturing semiconductor device

Abstract

A method of manufacturing a semiconductor device comprises a dividing layer forming step, a fixing part forming step, and a dividing step. The dividing layer forming step forms a dividing layer in a position at a predetermined depth from a surface of a first substrate containing semiconductor as a main component thereof. The dividing layer is for allowing a semiconductor substrate having a thickness corresponding to the predetermined depth to be divided from the first substrate. The fixing part forming step forms a fixing part after the dividing layer forming step. The fixing part is for fixing a part of the first substrate to become the semiconductor substrate to a second substrate, and is formed into a ring shape in an atmosphere at a lower pressure than a predetermined pressure, thereby sealing the interior of the ring shape. The dividing step divides the first substrate at the dividing layer in an atmosphere at the predetermined pressure after the fixing part forming step.

Dependencies are inferred from the claim text.