Multi-bit level shifter

A semiconductor device comprising:

• circuits each of which includes one or more positive-channel metal-oxide semiconductor field effect transistors (PFETs) or one or more negative-channel metal-oxide semiconductor field effect transistors (NFETs);
• first and second ones of the circuits representing first and second input circuits configured to operate in a first voltage domain,
• the one or more PFETs correspondingly thereof being in a first-voltage-domain N-well (FNW), the FNW being substantially centered in a central region of the semiconductor device;
• and
• third and fourth ones of circuits representing first and second single bit level shifters (SBLSs) configured to operate in a second voltage domain and electrically coupled correspondingly to the first and second input circuits,
• the one or more PFETs correspondingly thereof being in corresponding first and second second-voltage-domain N-wells (SNWs);
• and
• wherein the first and second SNWs are symmetrically disposed with respect to a first reference axis substantially bisecting the central region.

A semiconductor device comprising:

• circuits each of which includes one or more positive-channel metal-oxide semiconductor field effect transistors (PFETs) or one or more negative-channel metal-oxide semiconductor field effect transistors (NFETs);
• first to fourth ones of the circuits representing first, second, third and fourth input circuits configured to operate in a first voltage domain,
• the one or more PFETs correspondingly thereof being in a first-voltage-domain N-well (FNW), the FNW being substantially centered in a central region of the semiconductor device;
• and
• fifth to eighth ones of circuits representing first, second, third and fourth single bit level shifters (SBLSs) configured to operate in a second voltage domain and electrically coupled correspondingly to the first to fourth input circuits,
• the one or more PFETs correspondingly thereof being in corresponding first, second, third and fourth second-voltage-domain N-wells (SNWs);
• and
• wherein the first to fourth SNWs are symmetrically disposed with respect to a first reference axis substantially bisecting the central region.