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US 2026/0204887 A1Published application
Direct-current power cable system
AssigneeLs Cable & System Ltd.
InventorsHo Jung YUN, Si Ho SON, Woong Yup LEE
Life of this patent
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Abstract
The present disclosure relates to a direct-current power cable system. More specifically, the present disclosure relates to a direct-current power cable system capable of preventing or minimizing electric field distortion due to a local electric field concentration and insulation breakdown of a cable joint box by alleviating the electric field of a portion where space charges are excessively accumulated inside a sleeve member of an intermediate connection structure of an ultra-high voltage direct-current power cable.
Claims17
A direct-current power cable system, comprising:
- a pair of direct-current power cables, each including a conductor, an inner semiconductive layer surrounding the conductor, an insulating layer surrounding the inner semiconductive layer, and an outer semiconductive layer surrounding the insulating layer, wherein cable connection regions in which the conductor, the insulating layer, and the outer semiconductive layer are sequentially exposed are disposed to face each other;
- a cable joint box connecting the pair of direct-current power cables, the cable joint box including:
- a conductor connection portion configured to connect the conductors of the pair of direct-current power cables;
- a sleeve member mounted to surround the conductor connection portion and the cable connection regions;
- and a housing accommodating the sleeve member,
- wherein the sleeve member includes:
- a first electrode disposed to surround the conductor connection portion and electrically connected to the conductor connection portion;
- a pair of second electrodes each provided on both sides of the first electrode along a cable length direction;
- an electric field alleviation layer surrounding the first electrode, at least a portion of the pair of second electrodes, and the insulating layer, and
- wherein at least a portion of the electric field alleviation layer is disposed between the second electrode and the outer semiconductive layer so that the second electrode and the outer semiconductive layer are in a non-contact state, and is in contact with the outer semiconductive layer;
- a rubber insulating layer surrounding the electric field alleviation layer and formed in a non-contact state with the second electrode;
- and
- a sleeve shielding layer surrounding the rubber insulating layer.
10 more elements
Dependencies are inferred from the claim text.