Composition for photoresist removal and method for removing photoresist

2:

• The composition according to claim 1, wherein the organic solvent has Hansen solubility parameter coordinates that are within the area of the sphere centered on δd=16.0, δp=8.7, δh=15.5 within a radius of 3.00 MPa0.5 or less.

3:

• The composition according to claim 1, wherein the organic solvent includes at least one selected from the group consisting of ethylene glycol monomethyl ether, methylhydrazine, 2,2,2-trifluoroethanol, diacetin, 1-chloro-2-propanol, dimethylaminoethanol, ethylenediamine, 1,9-nonanediol, 2-bromoallyl alcohol, 2,3-dichloropropanol, furfuryl alcohol, adipic acid, ethylene chlorohydrin, N-formylethylamine, ethylene glycol monopropyl ether, 2-chloro-2-propen-1-ol, 1-(2-hydroxyethyl)-2-pyrrolidone, diethylene glycol monovinyl ether, diethylenetriamine, 1,3-dichloro-2-propanol, 2-ethoxyethanol, 3-chloro-2-propen-1-ol, serotonin, 1,6-hexanediol, 2-cyclopenten-1-ol, methylamine, formic acid, ethylene glycol monoisopropyl ether, 3-azidopropene, 2,3-butadien-1-ol, allyl alcohol, 2-fluoropropenoic acid, acetic acid, azidoethane, isocyanic acid, n-propanol, (E)-2-buten-1-ol, methyl salicylate, 2-propanol, L-(−)-tyrosine, dipropylene glycol, ethyl carbamate, and 2,2-dimethyl-1-propanol.

4:

• The composition according to claim 1, wherein an etching rate of copper is less than 0.05 μm/min.

5:

• The composition according to claim 1, which is water-soluble.

6:

• The composition according to claim 1, comprising, based on a total amount of the composition, 3.0 to 50% by mass of the alkaline agent, 0.1 to 30% by mass of the organic solvent, and 0.001 to 1.0% by mass of the azole compound.

7:

• The composition according to claim 1, wherein the pattern is a circuit pattern that serves as a connection terminal portion of copper wiring formed on an insulating layer having the copper wiring in at least a part thereof.

8:

• A method for removing a photoresist, the method comprising:
• bringing the composition according to claim 1 into contact with the photoresist for forming the copper-containing pattern.

9:

• The method according to claim 8, wherein the pattern is a circuit pattern that serves as a connection terminal portion of copper wiring formed on an insulating layer having the copper wiring in at least a part thereof.

10:

• A method for producing a printed wiring board, a semiconductor element, or a semiconductor package, the method comprising:
• bringing the composition according to claim 1 into contact with Ibg photoresist for forming the copper-containing pattern.

The method according to claim 10, wherein the pattern is a circuit pattern that serves as a connection terminal portion of copper wiring formed on an insulating layer having the copper wiring in at least a part thereof.