Resist composition, laminate, and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsShun KIKUCHI, Kousuke OHYAMA, Ryo NISHIKAWA, Satoshi KUSAMA, Masaki OHASHI
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsShun KIKUCHI, Kousuke OHYAMA, Ryo NISHIKAWA, Satoshi KUSAMA, Masaki OHASHI
Estimating the term…
The present invention is a resist composition including at least one kind of hypervalent iodine compounds selected from the following formulae (1), (2), and (3), a carboxy group-containing compound, and a solvent. In the formula, n1 represents 0 to 2; n2 represents 0 to 2; n3 represents 0 to 3; R11 to R13 represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms; X1 to X3 represent *—O—XA1— or *—XA2(—R14)—C(═O)—; XA1 represents a carbonyl group or a hydrocarbylene group having 1 to 10 carbon atoms; XA2 represents nitrogen or sulfur; and R14 represents a hydrogen atom, a halogen atom, or a hydrocarbyl group having 1 to 20 carbon atoms. This can provide a non-chemically amplified resist composition that is excellent in sensitivity and a resolution limit in photolithography with a high-energy beam, in particular in electron beam (EB) lithography and EUV lithography.
A resist composition comprising at least one kind of hypervalent iodine compounds selected from the following formulae (1), (2), and (3), a carboxy group-containing compound, and a solvent,
Dependencies are inferred from the claim text.