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US 2026/0198394 A1Published application
Direct bonding methods and structures
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsCyprian Emeka Uzoh, Thomas Workman
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Abstract
Disclosed herein are methods for direct bonding. In some embodiments, a direct bonding method comprises preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element; and after the preparing, providing a protective layer over the prepared first bonding surface of the first element, the protective layer having a thickness less than 3 microns.
Claims1
A bonding method comprising:
- preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element;
- and
- after the preparing, providing a protective layer over at least a portion of the prepared first bonding surface of the first element, the protective layer having a thickness less than 3 microns.
Dependencies are inferred from the claim text.