Lithography method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJia-Lin WEI, Lilin CHANG, Yahru CHENG
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Abstract
A lithography method comprises the following steps. A target layer is formed over a substrate. A photoresist layer is formed over the target layer. The photoresist layer is exposed. The photoresist layer is developed using a first developer such that first photoresist layer has a first pitch. The photoresist layer is developed using a second developer different from the first developer. An organic material is formed over the photoresist layer. The organic material and the photoresist layer are etched.
Claims20
A lithography method, comprising:
- forming a target layer over a substrate;
- forming a photoresist layer over the target layer;
- exposing the photoresist layer;
- developing the photoresist layer using a first developer such that first photoresist layer has a first pitch;
- developing the photoresist layer using a second developer different from the first developer;
- forming an organic material over the photoresist layer;
- and
- etching the organic material and the photoresist layer.
A lithography method, comprising:
- forming a target layer over a substrate;
- forming a patterned photoresist layer over the target layer;
- forming an organic material over the patterned photoresist layer and the target layer, wherein the organic material comprises a first polymer and a second polymer different from the first polymer, the first polymer is over the patterned photoresist layer, and the second polymer is over the target layer;
- removing the first polymer and the patterned photoresist layer;
- and
- etching the target layer using the second polymer as an etch mask.
A lithography method, comprising:
- forming a target layer over a substrate;
- spin coating a photoresist composition over the target layer to form a photoresist layer, wherein the photoresist composition comprises a photosensitive polymer and a crosslinker, the crosslinker has a crosslink temperature to crosslink the photosensitive polymer;
- exposing the photoresist layer;
- developing the photoresist layer;
- increasing a crosslinking density of the photoresist layer through baking the photoresist layer at a first bake temperature greater than or equal to the crosslink temperature, performing a UV treatment to the photoresist layer or etching the photoresist layer;
- forming an organic material over the photoresist layer;
- and
- etching the organic material and the photoresist layer.
Dependencies are inferred from the claim text.