Aluminum hydride precursor for aluminum metal ald

A method for forming a film, the method comprising:

• sequentially exposing a surface to a first precursor and a second precursor to form a film comprising a metal and a metal alloy,
• wherein the first precursor comprises a metal-hydride precursor represented by a general formula (I)
• a general formula (II)
• or oligomers thereof, and wherein M is a trivalent metal and each of R1, R2, R3, R3′, R4, and R4′ independently comprise a C1-C20 unsubstituted alkyl group, a C1-C20 substituted alkyl group, a C1-C20 unsubstituted alkenyl group, a C1-C20 substituted alkenyl group, a C1-C20 unsubstituted alkynyl group, a C1-C20 substituted alkynyl group, a trialkylsilyl group, a substituted aromatic group, an unsubstituted aromatic group, a non-metal atom, a non-metal group, or combinations thereof.

A method for forming a film, comprising:

• sequentially exposing a surface to a first precursor and a second precursor to form a film comprising a metal and a metal alloy,
• wherein the first precursor comprises an alane precursor represented by a formula (III)
• and
• wherein the second precursor comprises a metal halide.