Solid-state imaging element

Abstract

Provided is a solid-state imaging element with which it is possible to minimize crosstalk between different pixel columns while suppressing a decrease in quantum efficiency of a photoelectric conversion unit due to a pixel separating section. The solid-state imaging element includes a plurality of pixels arranged in a two-dimensional matrix in the X direction and the Y direction and including a photoelectric conversion unit (N-type semiconductor thin film) containing a compound semiconductor. In addition, the solid-state imaging element includes a pixel separating section disposed only at a pixel boundary extending in the X direction.

Dependencies are inferred from the claim text.