Contact structure and semiconductor memory device including the same

A contact structure comprising:

• a first conductive line extending in a first direction;
• a second conductive line extending in a second direction intersecting the first conductive line in the first direction;
• and
• a contact between the first conductive line and the second conductive line,
• wherein the contact includes a first portion adjacent to the first conductive line and a second portion adjacent to the second conductive line,
• wherein each of the first portion and the second portion has a width that changes in a direction from the first conductive line toward the second conductive line, and
• wherein a maximum width of the first portion is greater than a minimum width of the second portion.

A semiconductor memory device comprising:

• a word line extending in a first direction;
• a bit line extending in a second direction intersecting the word line extending in the first direction and spaced apart from the word line in a third direction;
• a selector-only memory device between the word line and the bit line;
• and
• a plurality of contacts electrically connected to the word line and the bit line,
• wherein each of the plurality of contacts includes a first portion relatively far from the word line or the bit line and a second portion relatively close to the word line or the bit line,
• wherein each of the first portion and the second portion has a width that changes along the third direction, and
• wherein a maximum width of the first portion is greater than a minimum width of the second portion.