Semiconductor devices and methods of manufacture
OwnerChien-He Wang, Jung-Hau Shiu +1inventors
InventorsChien-He Wang, Jung-Hau Shiu, Hsiao-Kuan Wei
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Abstract
Semiconductor devices and methods of manufacture are presented which includes: forming metallization layers over a semiconductor substrate; forming a first redistribution layer over the metallization layers; depositing an etch stop layer over the first redistribution layer, the forming the etch stop layer including: forming a first silicon rich region; and forming a first nitrogen rich region; and forming a first bond pad via through the etch stop layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming metallization layers over a semiconductor substrate;
- forming a first redistribution layer over the metallization layers;
- depositing an etch stop layer over the first redistribution layer, the forming the etch stop layer comprising:
- forming a first silicon rich region;
- and
- forming a first nitrogen rich region;
- and
- forming a first bond pad via through the etch stop layer.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a first portion of a first etch stop layer in physical contact with a conductive portion of a first redistribution layer, the first portion having a first nitrogen to silicon ratio;
- depositing a second portion of the first etch stop layer, the second portion having a second nitrogen to silicon ratio greater than the first nitrogen to silicon ratio;
- depositing a bulk portion of the first etch stop layer, the bulk portion having a third nitrogen to silicon ratio between the first nitrogen to silicon ratio and the second nitrogen to silicon ratio;
- and
- forming a first bond pad via through the first etch stop layer.
A semiconductor device comprising:
- metallization layers over a semiconductor substrate;
- a first etch stop layer in physical contact with a conductive portion of the metallization layers, the first etch stop layer comprising:
- a first silicon rich region;
- a first nitrogen rich region over the first silicon rich region;
- and
- a first bulk region over the first nitrogen rich region;
- and
- a first bond pad via extending through the first etch stop layer.
Dependencies are inferred from the claim text.