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US 2026/0182358 A1Published application
Etch stop layer isolation from metal vias and contacts
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsRui-Fu Chen, Hsin Yang Hung, Shih-Jung Ho, Kuan-Kan Hu, Wei-Xiang You
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Abstract
One aspect of the present disclosure pertains to a structure. The structure includes a first interlayer dielectric (ILD) layer; a conductive feature disposed in the first ILD layer; an etch stop layer (ESL) disposed on the first ILD layer; a second ILD layer disposed on the ESL; and a metal feature disposed in the second ILD layer and in contact with the conductive feature, where the metal feature is laterally separated from the ESL by an air gap.
Claims20
A structure comprising:
- a first interlayer dielectric (ILD) layer;
- a conductive feature disposed in the first ILD layer;
- an etch stop layer (ESL) disposed on the first ILD layer;
- a second ILD layer disposed on the ESL;
- and
- a metal feature disposed in the second ILD layer and in contact with the conductive feature, wherein the metal feature is laterally separated from the ESL by an air gap.
3 more elements
A structure comprising:
- a source/drain (S/D) contact over an S/D feature;
- a gate structure over a channel region, wherein the channel region is adjacent the S/D feature;
- a first interlayer dielectric (ILD) layer over the gate structure and surrounding the S/D contact;
- an etch stop layer over the first ILD layer and the S/D contact;
- a second ILD layer over the etch stop layer;
- and
- an S/D via landing on the S/D contact, wherein the S/D via is embedded in the second ILD layer and separated from the etch stop layer.
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A method, comprising:
- forming a metal contact in a first dielectric layer;
- depositing an etch stop layer (ESL) over the metal contact and the first dielectric layer;
- depositing a second dielectric layer over the ESL;
- form a trench through the second dielectric layer and the ESL to expose the metal contact;
- form sacrificial liners along sidewalls of the trench;
- form protective liners along sidewalls of the sacrificial liners;
- deposit a metal in the trench and between the protective liners;
- selectively remove the sacrificial liners to form air gaps;
- and
- seal the air gaps by performing ion implantation to the second dielectric layer.
7 more elements
Dependencies are inferred from the claim text.