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US 2026/0176793 A1Published application
Method and system for enhancing growth of chalcogen films
OwnerJing-Kai Huang, Chenyang Liinventors
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Abstract
A device is described. The device includes a substrate and a transition metal chalcogen film formed on the substrate by vapor deposition. The transition metal chalcogen film is continuous over an area of the substrate and is at least one monolayer thick. The area has a dimension of at least two inches. The vapor deposition may use a metal precursor, a chalcogen precursor, and at least one additive.
Claims20
A device, comprising:
- a substrate;
- and
- a transition metal chalcogen (TMC) film formed on the substrate by vapor deposition, the TMC film being continuous over an area of the substrate and being at least one monolayer thick, the area having a dimension of at least two inches.
A device, comprising:
- a substrate;
- and
- an electronic structure on the substrate, the electronic structure including a transition metal dichalcogenide (TMD) film formed by vapor deposition, as fabricated the TMD film being continuous over an area of the device and being at least one monolayer thick, the area having a dimension of at least two inches, the TMD film being a single crystal as fabricated.
A method, comprising:
- providing a metal precursor, a chalcogen precursor, and at least one additive to a reaction chamber having a substrate;
- and
- forming, in the reaction chamber, a transition metal chalcogen (TMC) film on a substrate by vapor deposition and using the metal precursor, the chalcogen precursor, and the at least one additive, the TMC film being continuous over an area of the substrate and being at least one monolayer thick, the area having a dimension of at least two inches;
- wherein at least the metal precursor and the chalcogen precursor are separately introduced into the reaction chamber.
1 more element
Dependencies are inferred from the claim text.