Mems device with distributed programmable elements

A microelectromechanical device comprising:

• a first readout electrode;
• a second readout electrode;
• a deflectable structure of semiconductor material comprising:
• a first deflectable portion overlying the first readout electrode and spaced apart from the first readout electrode by a first airgap;
• and
• a second deflectable portion overlying the second readout electrode and spaced apart from the second readout electrode by a second airgap;
• an intermediate electrode layer disposed on the deflectable structure of semiconductor material;
• and
• a plurality of individually programmable elements disposed on the deflectable structure, wherein the respective individually programmable elements comprise a respective programming electrode and a respective layer of programmable material disposed on the intermediate electrode layer between the respective programming electrode and the intermediate electrode layer, wherein:
• first deflection of the first deflectable portion is influenced by a respective programmed state of the programmable material of respective individually programmable elements of a first subset of the plurality of individually programmable elements disposed on the first deflectable portion;
• a first variable capacitance between the first readout electrode and the intermediate electrode layer associated with the first airgap is influenced by the first deflection of the first deflectable portion;
• second deflection of the second deflectable portion is influenced by a respective programmed state of the programmable material of respective individually programmable elements of a second subset of the plurality of individually programmable elements disposed on the second deflectable portion;
• and
• a second variable capacitance between the second readout electrode and the intermediate electrode layer associated with the second airgap is influenced by the second deflection of the second deflectable portion.

A microelectromechanical device comprising:

• a first readout electrode;
• a second readout electrode;
• a deflectable structure of semiconductor material comprising a first side portion spaced apart from the first readout electrode by a first airgap and a second side portion spaced apart from the second readout electrode by a second airgap;
• an intermediate electrode layer disposed on the deflectable structure of semiconductor material;
• a first plurality of individually programmable elements disposed on a first side of the first side portion of the deflectable structure between the deflectable structure and the first readout electrode, wherein the respective individually programmable elements of the first plurality of individually programmable elements comprise a respective programming electrode and a respective layer of programmable material between the respective programming electrode and the intermediate electrode on the first side of the deflectable structure;
• and
• a second plurality of individually programmable elements disposed on a second side of the second side portion of the deflectable structure between the deflectable structure and the second readout electrode, wherein the respective individually programmable elements of the second plurality of individually programmable elements comprise a respective programming electrode and a respective layer of programmable material between the respective programming electrode and the intermediate electrode on the second side of the deflectable structure.