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AssigneeFuji Electric Co., Ltd.
InventorsTakeshi TAWARA, Tatsuhiko FUJIHIRA
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Provided is a semiconductor device manufacturing method comprising: raising a temperature of a semiconductor substrate from a predetermined intake temperature to a predetermined deposition temperature; depositing, at a predetermined deposition position, a semiconductor layer on the semiconductor substrate at the deposition temperature; and lowering a temperature of the semiconductor substrate from the deposition temperature to a predetermined extraction temperature. The raising and the lowering may include at least one of: in the raising, moving the semiconductor substrate from an intake position to a temperature raising position different from the deposition position, or in the lowering, moving the semiconductor substrate from the deposition position to a temperature lowering position different from the deposition position.
A semiconductor device manufacturing method comprising:
A semiconductor device manufacturing apparatus comprising:
A semiconductor device manufacturing apparatus comprising:
Dependencies are inferred from the claim text.