Manufacturing method of semiconductor structure

Abstract

A manufacturing method of a semiconductor structure is provided. The method includes the following steps. A conductive layer is formed on a substrate. A protection layer is formed on the conductive, wherein the protection layer includes a plurality of first pores, and the first pores expose portions of the conductive layer. A nitridation treatment is performed on the exposed portions of the conductive layer through the first pores to form nitride portions at a top surface of the conductive layer. A dielectric layer is formed on the protection layer, wherein the dielectric layer includes a plurality of second pores. A clean treatment is performed on the dielectric layer.

Dependencies are inferred from the claim text.