Dual frequency pulsed plasma processing treatments

A processing method, comprising treating a first layer formed in a device feature formed on a surface of a substrate, wherein treating the first layer comprises:

• establishing a dual radio frequency (RF) capacitively coupled plasma (CCP) in a plasma processing chamber by:
• delivering a plurality of process gases to a processing region of the plasma processing chamber, wherein the plurality of process gases comprises a first gas and a second gas;
• delivering a first RF power at a first RF frequency from a first RF generator to a first electrode of the plasma processing chamber;
• and
• delivering a second RF power at a second RF frequency from a second RF generator to the first electrode of the plasma processing chamber, wherein:
• the delivering the first RF power and the second RF power comprises pulsing the first RF power and the second RF power at a duty cycle and a pulsing frequency;
• the first RF frequency is greater than the second RF frequency;
• and
• the dual RF frequency capacitively coupled plasma (CCP) is formed between the first electrode and the substrate that is disposed on a substrate supporting surface of a substrate support.