A method of controlling a charged particle beam device that performs deposition processing or etching processing on a sample and comprises a charged particle beam-emitting optical system that irradiates a charged particle beam, a sample stage that holds a sample, a drive mechanism that drives the sample stage, a gas supply unit that supplies etching gas to a surface of the sample, and a computer that sets a processing region of the sample, the method comprising:
- setting a different processing region for each scan for the sample with the computer;
- and
- controlling the charged particle beam-emitting optical system and the drive mechanism with the computer so as to irradiate the processing region with a charged particle beam to perform etching processing of the sample.