Imprint device, imprinting method, and method of manufacturing semiconductor device
AssigneeKioxia Corporation
InventorsRyutaro OTAHARA, Shuichi TANIGUCHI, Yukichi KAMITA, Kyo OTSUBO, Masayuki HATANO
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Abstract
An imprint device according to the embodiment performs an imprinting process. The imprinting process includes forming a resin film on a substrate having a plurality of shot regions and forming a pattern by pressing a template against the resin film. The imprint device includes a computer that controls the imprinting process. The computer changes a residual layer thickness based on a particle size of a foreign substance existing on the substrate. The residual layer thickness is a thickness of the resin film at a bottom face of a recessed part in the pattern.
Claims20
An imprint device performing an imprinting process, the imprinting process including forming a resin film on a substrate having a plurality of shot regions and forming a pattern by pressing a first template against the resin film, the imprint device comprising:
- a computer controlling the imprinting process and being configured to
- change a residual layer thickness based on a particle size of a foreign substance on the substrate, the residual layer thickness being a thickness of the resin film at a bottom face of a recessed part in the pattern.
An imprinting method of forming a pattern by pressing a first template against a resin film, the resin film being formed on a substrate having a plurality of shot regions, the method comprising:
- changing a residual layer thickness based on a particle size of a foreign substance on the substrate, the residual layer thickness being a thickness of the resin film at a bottom face of a recessed part in the pattern.
A method of manufacturing a semiconductor device including an imprinting method, the imprinting method being performed to form a pattern by pressing a first template against a resin film, the resin film being formed on a semiconductor substrate having a plurality of shot regions, the method of manufacturing the semiconductor device comprising:
- changing a residual layer thickness based on a particle size of a foreign substance on the semiconductor substrate, the residual layer thickness being a thickness of the resin film at a bottom face of a recessed part in the pattern;
- and
- processing a film by using the resin film having the pattern as a mask.
Dependencies are inferred from the claim text.