Multi-wavelength laser light source, method of manufacturing the same, and silicon photonic integrated circuit apparatus using the same

A method of manufacturing a multi-wavelength laser light source, the method comprising:

• forming a multi-groove pattern in a partial region of a silicon substrate;
• forming a laser element, based on a III-V compound semiconductor material and configured to generate a pump laser light, by forming a buffer layer crystal grown with respect to the multi-groove pattern and forming a light emitting layer structure epitaxially grown on the buffer layer, the light emitting layer structure comprising a quantum well structure formed by alternately stacking quantum barrier layers and quantum well layers multiple times;
• and
• forming a micro-resonator and a waveguide on the silicon substrate, the waveguide being configured to be optically coupled to the micro-resonator and to have an input end at a level of the quantum well structure of the laser element such that the laser element is configured to input the pump laser light,
• wherein the micro-resonator is formed to have anomalous group velocity dispersion (GVD), and the micro-resonator is configured to generate a soliton frequency comb with respect to the pump laser light, and
• wherein the micro-resonator is further configured to generate laser light having a plurality of discontinuous wavelength bands of the soliton frequency comb.

A silicon photonic integrated circuit (PIC) apparatus comprising:

• a multi-wavelength laser light source comprising:
• a laser element on a silicon substrate, the laser element being based on a III-V compound semiconductor material and configured to generate pump laser light;
• a micro-resonator on the silicon substrate, the micro-resonator being configured to generate a soliton frequency comb with respect to the pump laser light;
• and
• a waveguide on the silicon substrate, the waveguide being configured to enable optical coupling to the micro-resonator and to transmit the pump laser light input from the laser element to the micro-resonator;
• and
• at least one optical element on the silicon substrate and optically connected to the multi-wavelength laser light source,
• wherein a multi-groove pattern is in a partial region of the silicon substrate,
• wherein the laser element comprises a buffer layer crystal grown with respect to the multi-groove pattern of the silicon substrate, and a light emitting layer structure epitaxially grown on the buffer layer and comprising a quantum well structure that comprises quantum barrier layers and quantum well layers alternately stacked multiple times,
• wherein the micro-resonator has anomalous group velocity dispersion (GVD) on the silicon substrate, and is further configured to generate the soliton frequency comb with respect to the pump laser light, and
• wherein the micro-resonator included in the multi-wavelength laser light source is configured to generate laser light having a plurality of discontinuous wavelength bands of the soliton frequency comb.