Method of Wafer Separation
AssigneeWolfspeed, Inc.
InventorSimon Bubel
Life of this patent
Estimating the term…
Abstract
A method of removing a wide bandgap semiconductor wafer from a boule is provided. The method includes forming a modified region in the boule through diffusion or drift of a substance from a surface of the boule and separating the wide bandgap semiconductor wafer from the boule along a least a portion of the modified region.
Claims20
A method of removing a wide bandgap semiconductor wafer from a boule, the method comprising:
- forming a modified region in the boule through diffusion or drift of a substance from a surface of the boule;
- and
- separating the wide bandgap semiconductor wafer from the boule along at least a portion of the modified region.
A system for separating a wide bandgap semiconductor wafer from a boule, the system comprising:
- a radiation source configured to provide a damage-inducing emission, wherein the damage-inducing emission is configured to induce a subsurface damage layer in a boule;
- and
- a substance source in contact with a surface of the boule configured to transmit the substance through the surface to the subsurface damage layer to form a modified region.
A semiconductor wafer comprising silicon carbide, the semiconductor wafer comprising a diffused impurity, wherein a concentration of the diffused impurity is non-uniform along a thickness of the semiconductor wafer, wherein a ratio of the concentration of the diffused impurity in one major surface region of the semiconductor wafer to the concentration of the diffused impurity in a central region is about 10 or more.
Dependencies are inferred from the claim text.