Transistor and display device including the same

A display device comprising:

• a switching transistor disposed on a substrate, the switching transistor including a first gate electrode, a first source electrode, a first drain electrode, and a first active layer;
• and
• a driving transistor disposed on the substrate and spaced apart from the switching transistor, the driving transistor including a second gate electrode, a second source electrode, a second drain electrode, and a second active layer,
• wherein the first active layer comprises:
• a first channel portion overlapping with the first gate electrode;
• a first conductive portion positioned at opposite sides of the first channel portion, the first conductive portion being doped with a first dopant and contacting the first source electrode and the first drain electrode;
• and
• a dual doping portion positioned between the first conductive portion and the first channel portion, the dual doping portion being doped with a combination of the first dopant and a second dopant different from the first dopant, and
• wherein the second active layer comprises:
• a second channel portion overlapping with the second gate electrode;
• a second conductive portion positioned at opposite sides of the second channel portion and doped with the first dopant, the second conductive portion contacting the second source electrode and the second drain electrode;
• and
• a second active layer offset portion positioned between the second channel portion and the second conductive portion, the second active layer offset portion being doped with the first dopant and having a resistance that changes based on a distance away from second channel portion.

A transistor comprising:

• a first active layer including a first conductive portion, a second conductive portion, a first channel portion, a first dual doping portion between the first conductive portion and the first channel portion and second dual doping portion between the first channel portion and the second conductive portion;
• and
• a first gate electrode overlapping with a portion of the first active layer,
• wherein the first dual doping portion includes a first dopant and a second dopant,
• wherein the second dual doping portion includes the first dopant and the second dopant,
• wherein a length of the first dual doping portion is less than a length of the first conductive portion and a length of the first channel portion,
• wherein a length of the second dual doping portion is less than a length of the second conductive portion and the length of the first channel portion, and
• wherein the second dopant is absent from the first conductive portion, the second conductive portion and the first channel portion.