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AssigneeSemes Co., Ltd.
InventorsMyoung Sub NOH, Tae Hwan YOUN, Wan Jae PARK
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A substrate processing apparatus and a substrate processing method are proposed, and the substrate processing apparatus includes a chamber having a processing space therein, a substrate support unit arranged in the processing space and for supporting a substrate, an ion blocker arranged above the substrate support unit and for dividing the processing space into an upper region where plasma is generated and a lower region, a gas supply unit for supplying a fluorine-containing gas to the upper region, an upper electrode module arranged above the ion blocker and for supplying the fluorine-containing gas to the upper region, and a high-frequency power module for applying electric power to the upper electrode module to generate the plasma in the upper region, wherein a coating layer for capturing fluorine radicals of the plasma is formed on at least a part of a surface of the upper electrode module.
A substrate processing apparatus, comprising:
A substrate processing apparatus, comprising:
A method of processing a substrate in a substrate processing apparatus comprising a chamber having a processing space therein, a substrate support unit arranged in the processing space and configured to support the substrate, an ion blocker arranged above the substrate support unit and configured to divide the processing space into an upper region and a lower region, an upper electrode module arranged above the ion blocker and configured to supply a fluorine-containing gas to the upper region and have at least a part thereof comprising a coating layer comprising nickel, a high-frequency power module configured to apply electric power to the upper electrode module to generate plasma in the upper region, the method comprising:
Dependencies are inferred from the claim text.