ORGANOMETALLIC COMPOUNDS, METHODS OF SYNTHESIZING ORGANOMETALLIC COMPOUNDS, and METHODS OF DEPOSITING METAL OXIDE FILMS and METAL NITRIDE FILMS
AssigneeSeastar Chemicals Ulc
InventorsShaun CEMBELLA, Diana FABULYAK, Cassidy CONOVER, Collin CAMPBELL, Wesley GRAFF
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Abstract
Disclosed herein are organometallic compounds including monomeric alkoxyaminosilane complexes and dimeric alkoxyaminosilane complexes useful as precursors for metal oxide and metal nitride vapor phase deposition. Additionally, disclosed herein are methods for synthesizing these organometallic compounds and methods for forming metal oxide films and metal nitride films by vapor phase deposition using these organometallic compounds.
Claims26
1-8. (canceled)
An organometallic compound of Formula II:
- wherein
- R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H and an acyclic or a cyclic alkyl group having from 1 to 10 carbon atoms, and
- n is an integer from 0 to 3 and m is an integer from 1 to 3.
An organometallic compound of Formula III:
- R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H and an acyclic or a cyclic alkyl group having from 1 to 10 carbon atoms,
- n is an integer from 0 to 3 and m is an integer from 1 to 3,
- X is selected from the group consisting of O, NR7, CO, COO, CO(CR7R8)y, and (CR7R8)y,
- R7 and R8 are independently selected from the group consisting of H and an acyclic or a cyclic alkyl group having from 1 to 10 carbon atoms, and
- y is an integer from 1 to 6.
A method of forming a metal oxide film or a metal nitride film by a vapor phase deposition process, comprising:
- (A) providing at least one substrate having functional O—H groups covering the surface,
- (B) delivering to said substrate at least one compound of Formula II in the gaseous phase:
- wherein
- R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H and an acyclic or a cyclic alkyl group having from 1 to 10 carbon atoms, and
- n is an integer from 0 to 3 and m is an integer from 1 to 3,
- (C) purging the substrate with purge gas,
- (D) delivering to said substrate an oxygen source or a nitrogen source in the gaseous or plasma phase,
- (E) purging the substrate with purge gas,
- (F) repeating steps (B) through (E) until a desired thickness of metal oxide has been deposited.
A method of forming a metal oxide film or a metal nitride film by a vapor phase deposition process, comprising:
- (A) providing at least one substrate having functional O—H groups covering the surface,
- (B) delivering to said substrate at least one compound of Formula III in the gaseous phase:
- wherein
- R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H and an acyclic or a cyclic alkyl group having from 1 to 10 carbon atoms,
- n is an integer from 0 to 3 and m is an integer from 1 to 3,
- X is selected from the group consisting of O, NR7, CO, COO, CO(CR7R8)y, and (CR7R8)y,
- R7 and R8 are independently selected from the group consisting of H and an acyclic or a cyclic alkyl group having from 1 to 10 carbon atoms, and
- y is an integer from 1 to 6,
- (C) purging the substrate with purge gas,
- (D) delivering to said substrate an oxygen source or a nitrogen source in the gaseous or plasma phase,
- (E) purging the substrate with purge gas,
- (F) repeating steps (B) through (E) until a desired thickness of metal oxide has been deposited.
23-24. (canceled)
Dependencies are inferred from the claim text.