Method for correcting the thickness of a layer

A method for correcting thicknesses comprising successively:

• a step of providing carrier substrate comprising a main face and a secondary face opposite to the main face, the carrier substrate comprising a thin layer arranged on the side of the main face, the thin layer having a surface extending up to a peripheral edge;
• an etching step, in which the thin layer is etched in a localized manner by localized ion bombing and only on the side of the surface of the thin layer, so that a thickness of the thin layer varies progressively from a center of the thin layer towards the peripheral edge according to a thickness profile, and so that, upon completion of the etching step, the thickness profile of the etched thin layer has a concave or convex shape;
• and
• a planarization step, in which the thin layer is thinned by chemical-mechanical polishing, so that, upon completion of the planarization step, the thickness of the thin layer is substantially constant.