Polishing method and method for producing semiconductor component

Abstract

To provide a polishing method in which the generation of polishing scratches can be sufficiently suppressed while a sufficiently high polishing rate or selection ratio of an insulating film is maintained. A polishing method including bringing a surface to be polished into contact with a polishing pad while supplying a polishing agent to perform polishing through relative motion thereof, in which the polishing agent contains an abrasive particle and water, the polishing pad has a polishing layer containing a polyurethane resin, the polyurethane resin includes a constitution unit derived from MDI, a content of the MDI is 30 mass % 10 or more based on a total mass of the polishing layer, the polishing layer has a shore A hardness of 90 degrees or less, the polishing layer has a water absorption coefficient of 5% or more, and the surface to be polished includes an insulating film.

Dependencies are inferred from the claim text.