Semiconductor device and method

A semiconductor device comprising:

• a semiconductor fin, the semiconductor fin having a first conductivity type;
• a first well in the semiconductor fin, the first well having a second conductivity type;
• a first gate structure and a second gate structure over the semiconductor fin, the first gate structure and the second gate structure oriented perpendicular to a lengthwise direction of the semiconductor fin, the first gate structure covering a portion of the semiconductor fin with the first conductivity type and the second gate structure covering a portion of the semiconductor fin with the second conductivity type;
• a first epitaxial region in the semiconductor fin at a first side of the first gate structure;
• a second epitaxial region in the semiconductor fin interposed between the first gate structure and the second gate structure;
• a third epitaxial region in the semiconductor fin at a second side of the second gate structure;
• a first contact to the first epitaxial region;
• a second contact to the first gate structure;
• and
• a third contact to the third epitaxial region, the second epitaxial region being free from a contact thereto.

A semiconductor device comprising:

• a fin field-effect transistor (FinFET), the FinFET comprising a semiconductor fin, a transistor gate disposed over a channel region of the semiconductor fin, a source epitaxial region embedded in the semiconductor fin at a first side of the transistor gate, and a drain epitaxial region embedded in the semiconductor fin at a second side of the transistor gate;
• a first resistor embedded in the semiconductor fin between the source epitaxial region and a first epitaxial region;
• and
• a first gate structure over the first resistor, wherein the source epitaxial region is embedded in the semiconductor fin at a second side of the first gate structure, the first epitaxial region embedded in the semiconductor fin at a first side of the first gate structure.