Multiple wavelength laser device, method of manufacturing the same, and si -photonics system including multiple wavelength laser device

A method of manufacturing a multiple wavelength laser device, the method comprising:

• forming a plurality of protruding pins having at least one of a width and an arrangement period different from each other protruding from a silicon substrate, etching the plurality of protruding pins to a certain depth to form a plurality of protruding patterns having a width corresponding to each of the plurality of protruding pins and protruding from the silicon substrate;
• forming an insulating layer on the silicon substrate, the insulating layer comprising a plurality of trenches configured to accommodate each of the plurality of protruding patterns, at least one of the width and the arrangement period of the plurality of trenches being different from each other;
• and
• forming a plurality of laser devices on a surface of each protruding pattern of the plurality of protruding patterns,
• wherein the forming of the plurality of laser devices comprises:
• forming a plurality of buffer layer structures that fill the plurality of trenches to a height equal to or higher than a height of the insulating layer by crystal growth with respect to each surface of the plurality of protruding patterns;
• and
• forming a plurality of light-emitting layer structures formed the plurality of buffer layer structures and having a quantum well structure configured to emit laser light of different emission wavelengths based on at least one of the width and the arrangement period of the plurality of protruding patterns, and
• wherein at least one laser device of the plurality of laser devices has a different emission wavelength from at least one laser device of the remaining laser devices.

A silicon photonics system comprising:

• a multiple wavelength laser device formed by crystal growth in a silicon substrate;
• and
• an optical transmission system on the silicon substrate, the optical transmission system being configured to transmit laser light emitted from the multiple wavelength laser device,
• wherein the multiple wavelength laser device comprises:
• a plurality of protruding patterns protruding from the silicon substrate, at least one of a width and an arrangement period of the plurality of protruding patterns being different from each other;
• an insulating layer on the silicon substrate, the insulating layer comprising a plurality of trenches configured to accommodate each of the plurality of protruding patterns, at least one of the width and the arrangement period of the plurality of trenches being different from each other;
• and
• a plurality of laser devices on a surface of each protruding pattern of the plurality of protruding patterns,
• wherein each laser device of the plurality of laser devices comprises:
• a buffer layer structure formed by crystal growth with respect to the surface of each protruding pattern to fill each trench of the insulating layer, a height of the buffer layer structure being greater than or equal to a height of the insulating layer;
• and
• a light-emitting layer structure on the buffer layer structure, the light-emitting layer structure having a quantum well structure configured to emit laser light of different emission wavelength based on at least one of the width and the arrangement period of the plurality of protruding patterns,
• wherein at least one laser device of the plurality of laser devices has an emission wavelength different from at least one laser device of the remaining laser devices of the plurality of laser devices.