Borophene-based two-dimensional heterostructures, fabricating methods and applications of same

Abstract

The invention relates to a method for fabricating a two-dimensional (2D) heterostructure comprising depositing graphene on a substrate in an ultrahigh vacuum (UHV) chamber at a first temperature and a first chamber pressure to form sub-monolayer graphene on the substrate; and subsequently depositing borophene onto the sub-monolayer graphene on the substrate in the UHV chamber at a second temperature and a second chamber pressure so as to couple the borophene with the graphene on the substrate to form a 2D borophene-graphene heterostructure comprising lateral and/or vertical heterostructures.

Dependencies are inferred from the claim text.