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US 2026/0150666 A1Published application
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorTomohito KUDO
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Abstract
A semiconductor device includes a semiconductor substrate, a temperature sensing diode formed on the semiconductor substrate, an anode wiring connected to an anode portion of the temperature sensing diode, and a cathode wiring connected to a cathode portion of the temperature sensing diode. One of the anode wiring and the cathode wiring is disposed to overlap the other.
Claims17
A semiconductor device comprising:
- a semiconductor substrate;
- a temperature sensing diode formed on the semiconductor substrate;
- an anode wiring connected to an anode portion of the temperature sensing diode;
- and a cathode wiring connected to a cathode portion of the temperature sensing diode,
- wherein one of the anode wiring and the cathode wiring is disposed so as to overlap the other.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a temperature sensing diode formed on the semiconductor substrate;
- an anode wiring connected to an anode portion of the temperature sensing diode;
- and a cathode wiring connected to a cathode portion of the temperature sensing diode,
- wherein the temperature sensing diode is a PN junction diode that includes the anode portion including a P-type semiconductor layer and the cathode portion including an N-type semiconductor layer, and
- each of the anode wiring and the cathode wiring includes a semiconductor layer.
3 more elements
Dependencies are inferred from the claim text.