Method of forming a silicon on insulator substrate
AssigneeSK hynix Inc.
InventorsIl Do KIM, Jae Sun SONG, Seung Bum KIM
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Abstract
A method of forming an SOI substrate including a hydrogen thermal treatment performed on a pretreated sacrificial wafer, under high temperature. A stopper layer and a semiconductor layer may be sequentially formed on a first surface of the sacrificial wafer on which the hydrogen (H2) thermal treatment was performed. The stopper layer and the semiconductor layer may be formed by an epitaxial growth process using a mixed precursor including a monosilane (MS) source and a dichlorosilane (DCS) source.
Claims16
A method of forming a silicon on insulator (SOI) substrate, the method comprising:
- performing a hydrogen thermal treatment on a pretreated sacrificial wafer, under high temperature;
- forming a stopper layer on the sacrificial wafer on which the hydrogen thermal treatment was performed;
- and
- forming a semiconductor layer formed on the stopper layer,
- wherein the stopper layer and the semiconductor layer are formed by an epitaxial growth using a mixed precursor comprising a monosilane (MS) source and dichlorosilane (DCS) source.
A method of forming a silicon on insulator (SOI) substrate, the method comprising:
- performing a hydrogen thermal treatment on a pretreated sacrificial wafer, under a high temperature;
- forming a stopper layer on the sacrificial wafer following the hydrogen thermal treatment;
- forming a semiconductor layer formed on the stopper layer,
- forming a blocking oxide layer over the semiconductor layer;
- and
- forming a first bonding insulating layer over the blocking oxide layer, to form a first structure.
- wherein the stopper layer and the semiconductor layer are formed by an epitaxial growth method.
Dependencies are inferred from the claim text.