Systems for fluxless bonding using an atmospheric pressure plasma and methods for performing the same

A system configured to bond a chip to a substrate, comprising:

• an enclosure comprising one or more gases maintained at a pressure in a range from approximately 10 Pa to approximately 120 KPa and having an oxygen concentration less than approximately 1,000 ppm;
• a plasma generation device within the enclosure comprising two or more nozzles configured to supply plasma to at least one of a chip or a substrate, wherein at least one of the two or more nozzles or the chip or the substrate is configured to be moved relative to the other at a rate from approximately 0 mm/sec to approximately 400 mm/sec while supplying plasma;
• and
• a bonding subsystem within the enclosure configured to align the chip with the substrate and to apply a compressive force and heat to form a direct bond therebetween.

A method of forming a direct bond between a chip and a substrate, comprising:

• positioning the chip and the substrate within an enclosure containing one or more gases maintained at a pressure from approximately 10 Pa to approximately 120 KPa and having an oxygen concentration less than approximately 1,000 ppm;
• supplying plasma through two or more nozzles within the enclosure to expose different regions of at least one of a chip or a substrate ;
• moving at least one of the two or more nozzles or the at least one of the chip or the substrate relative to the other at a rate from approximately 0 mm/sec to approximately 400 mm/sec;
• aligning the chip with the substrate within the enclosure;
• applying a compressive force to force the chip and the substrate into direct mechanical contact within the enclosure;
• and
• applying heat to at least one of the chip or the substrate within the enclosure.