Ion beam source apparatus, ion beam processing system, and ion beam processing method

An ion beam processing system, comprising:

• a plasma chamber configured to generate plasma;
• a process chamber connected to the plasma chamber, wherein the process chamber defines a space where processing of a wafer is performed using an ion beam extracted from the plasma;
• a slit structure between the plasma chamber and the process chamber, the slit structure configured to extract the ion beam from the plasma and radiate the ion beam toward the wafer;
• and
• a voltage system configured to be electrically connected to each of the plasma chamber, the slit structure, and the wafer to generate an electric field between the plasma chamber and the slit structure and between the slit structure and the wafer,
• wherein the slit structure comprises:
• a plasma plate connected to the plasma chamber and including at least one opening through which the ion beam passes;
• at least one blocking bar within the plasma chamber, the at least one blocking bar spaced apart from the at least one opening by a gap, the gap being between the plasma plate and the at least one blocking bar in a first direction;
• and
• a lift structure connected to the at least one blocking bar, the lift structure configured to control an angle at which the ion beam passing through the at least one opening is radiated by adjusting the gap between the plasma plate and the at least one blocking bar in the first direction.

An ion beam processing method, comprising:

• applying, by a voltage system of an ion beam processing system, a bias voltage to each of a plasma chamber of the ion beam processing system, a slit structure of the ion beam processing system, and a wafer, wherein the slit structure is between the plasma chamber and a process chamber of the ion beam processing system;
• generating, by the bias voltage, plasma using a process gas supplied into the plasma chamber;
• extracting, by the slit structure, an ion beam from the plasma and radiating the ion beam toward the wafer;
• and
• performing, in the process chamber, processing of the wafer using the ion beam,
• wherein the slit structure includes:
• a plasma plate on a side of the plasma chamber, the plasma plate including an opening through which the ion beam passes;
• a blocking bar within the plasma chamber, the blocking bar spaced apart from the opening by a gap, the gap being between the plasma plate and the blocking bar in a first direction;
• and
• a lift structure connected to the blocking bar, the lift structure configured to control an angle at which the ion beam passing through the opening is radiated by adjusting the gap between the plasma plate and the blocking bar in the first direction.