Asymmetric Side Gap Writer Fabricated By Ion-Beam Etching (IBE) / Ion-Beam Deposition (IBD) Process For Aerial Density Capability (ADC) Improvement

A method comprising:

• providing a write head structure with at least a first side shield (SS) portion disposed on a first side of a central axis and a second SS portion disposed on a second side of the central axis;
• disposing a first dielectric layer adjacent to the first SS portion;
• disposing a second dielectric layer adjacent to the second SS portion;
• disposing a first metallic layer adjacent to the first dielectric layer;
• disposing a second metallic layer adjacent to the second dielectric layer;
• performing an ion-beam etching (IBE) process by applying directional etching to the first dielectric layer and/or the second dielectric layer to cause a different thickness between the first dielectric layer and the second dielectric layer, or performing an ion-beam disposition (IBD) process providing a directional deposition on the first metallic layer and/or the second metallic layer to cause a different thickness between the first metallic layer and the second metallic layer;
• and
• disposing a main pole (MP) between the first SS portion and the second SS portion, wherein a center of the MP is disposed offset from the central axis such that a distance between a center of the MP and the first SS portion is less than a distance between the center of the MP and the second SS portion.

A device comprising:

• a magnetic main pole (MP);
• a first metallic layer disposed adjacent to a first side of the MP;
• a second metallic layer disposed adjacent to a second side of the MP;
• a first dielectric layer disposed adjacent to the first metallic layer;
• a second dielectric layer disposed adjacent to the second metallic layer;
• a first side shield (SS) portion disposed on a first side of a central axis and adjacent to the first dielectric layer;
• and
• a second SS portion disposed on a second side of the central axis, wherein a center of the MP is disposed offset from the central axis such that a distance between a center of the MP and the first SS portion is less than a distance between the center of the MP and the second SS portion.