Backside power distribution network semiconductor architecture using direct epitaxial layer connection and method of manufacturing the same

A method of manufacturing a semiconductor architecture, the method comprising:

• providing a semiconductor substrate;
• providing a first semiconductor device on a first surface of the semiconductor substrate, the first semiconductor device comprising an active device that comprises an epitaxial layer;
• providing a trench from a second surface of the semiconductor substrate opposite to the first surface to a level of the epitaxial layer of the active device;
• providing a through-silicon via (TSV) in the trench such that the TSV is connected to the epitaxial layer of the active device;
• and
• providing a second semiconductor device on the second surface of the semiconductor substrate.