Electronic device
AssigneeSTMicroelectronics International N.V.
InventorsArthur ARNAUD, Sofia BOUGHALEB
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Abstract
An optoelectronic device includes a pixel having a pinned photodiode and a bipolar transfer transistor. The pinned photodiode and the bipolar transfer transistor are formed inside and on top of a same semiconductor substrate made of a group III-V material. A same doped semiconductor layer forms the collector of the bipolar transfer transistor and the cathode of the photodiode.
Claims26
An optoelectronic device comprising a pixel, the pixel comprising:
- a first semiconductor substrate made of a group III-V material;
- a first doped semiconductor layer supported by the first semiconductor substrate;
- a pinned photodiode;
- a bipolar transfer transistor;
- wherein the first doped semiconductor layer forms both a collector of the bipolar transfer transistor and a cathode of the pinned photodiode;
- a second doped semiconductor layer located between the first semiconductor substrate and the first doped semiconductor layer, wherein the second doped semiconductor layer forms an anode of the pinned photodiode;
- and
- a third doped semiconductor layer having a same conductivity type as the second doped semiconductor layer, wherein the third doped semiconductor layer forms a base of the bipolar transfer transistor, and wherein the first doped semiconductor layer is located between the second doped semiconductor layer and the third doped semiconductor layer.
An optoelectronic device comprising a pixel, the pixel comprising a pinned photodiode and a bipolar transfer transistor, the photodiode and the bipolar transfer transistor being formed inside and on top of a same first semiconductor substrate made of a III-V material, wherein a same first doped semiconductor layer forms a collector of the bipolar transfer transistor and a cathode of the pinned photodiode.
Dependencies are inferred from the claim text.