Electronic device including ferroelectric thin film structure

A semiconductor device comprising;

• a transistor;
• and
• a capacitor electrically connected to the transistor,
• wherein the capacitor comprises:
• a first electrode;
• a second electrode;
• and
• a ferroelectric thin film structure between the first electrode and the second electrode, the ferroelectric thin film structure comprising a first ferroelectric layer, a crystallization barrier layer comprising a dielectric material, and a second ferroelectric layer, wherein
• the first ferroelectric layer, the crystallization barrier layer, and the second ferroelectric layer are sequentially on the first electrode in a first direction,
• an average of sizes of crystal grains of the first ferroelectric layer is less than or equal to an average of sizes of crystal grains of the second ferroelectric layer, and
• a size of each crystal grain refers to a maximum width of the each crystal grain in a cross-section perpendicular to the first direction.