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US 2026/0143697 A1Published application
Antifuse thyristor bit cell
AssigneeInternational Business Machines Corporation
InventorsRobert Gauthier, Anindya Nath, Jens Haetty, Masoud Zabihi, Anthony I-Chih Chou, Dan Moy
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Abstract
An electrical antifuse bit cell structure includes a silicon controlled rectifier (SCR) having an anode, a cathode, and a blow gate. The blow gate is a Positive Field Effect Transistor (PFET) having a supply node for connection in series between a voltage supply and the anode of the SCR. The blow gate PFET in an on-state provides a permanent conductive path from the anode to the cathode.
Claims20
An electrical antifuse bit cell structure, comprising:
- a silicon-controlled rectifier (SCR) having an anode, a cathode, and a blow gate, wherein:
- the blow gate comprises a Positive Field Effect Transistor (PFET) having a supply node for connection in series between a voltage supply and the anode of the SCR;
- and
- the blow gate PFET in an on-state provides a permanent conductive path from the anode to the cathode.
1 more element
A method of making an electrical antifuse bit cell structure, the method comprising:
- providing a silicon-controlled rectifier (SCR) having an anode and a cathode, and a blow gate comprising a Positive Field Effect Transistor (PFET);
- coupling the blow gate PFET in series between a voltage supply node and the anode of the SCR;
- and
- configuring the blow gate PFET to provide a permanent conductive path from the anode to the cathode of the SCR based on an initial on-state current of about 0.5 mA.
1 more element
Dependencies are inferred from the claim text.