SEGMENTED FOCUS RING FOR PLASMA SEMICONDUCTOR PROCESSING AND PROCESSING TOOL CONFIGURED TO USE The SEGMENTED FOCUS RING

A processing tool for semiconductor processing, the processing tool comprising:

• a chamber;
• a substrate support disposed in the chamber, the substrate support having a support surface configured to support a semiconductor substrate;
• and
• a focus ring movement assembly disposed in the chamber, the focus ring movement assembly comprising a frame and a plurality of segment supports mechanically coupled to the frame, each segment support of the plurality of segment supports being configured to support a respective discrete segment of a focus ring, the focus ring comprising a plurality of discrete segments, the focus ring movement assembly being configured to support the plurality of discrete segments disposed laterally encircling the support surface, and to tilt the plurality of segment supports around respective axes, each axis of the respective axes being parallel to the support surface.

A method for semiconductor processing, the method comprising:

• performing a plasma semiconductor process having first process conditions on a first plurality of substrates using a processing tool, wherein a plurality of discrete segments of a focus ring laterally encircle a substrate during the plasma semiconductor process, the first process conditions corresponding to respective positions of the plurality of discrete segments disposed at respective first radial distances from a substrate during the plasma semiconductor process on the first plurality of substrates;
• measuring respective first characteristics of the first plurality of substrates proximate to respective centers of the first plurality of substrates, the first characteristics being formed by the plasma semiconductor process;
• measuring respective second characteristics of the first plurality of substrates proximate to respective edges of the first plurality of substrates, the second characteristics being formed by the plasma semiconductor process;
• determining, by a processor-based system, second process conditions to be applied while performing the plasma semiconductor process on a second plurality of substrates based on the first characteristics and the second characteristics, the second process conditions corresponding to respective positions of the plurality of discrete segments disposed at respective second radial distances from a substrate during the plasma semiconductor process on the second plurality of semiconductor substrates;
• and
• performing the plasma semiconductor process having the second process conditions on the second plurality of substrates using the processing tool.

A method for semiconductor processing, the method comprising:

• performing a plasma semiconductor process having first process conditions on a first plurality of substrates using a processing tool, wherein a plurality of discrete segments of a focus ring laterally encircle a substrate during the plasma semiconductor process, the first process conditions corresponding to respective positions of the plurality of discrete segments disposed at respective tilt angles relative to a top surface of a substrate during the plasma semiconductor process on the first plurality of substrates;
• measuring respective first characteristics of the first plurality of substrates proximate to respective centers of the first plurality of substrates, the first characteristics being formed by the plasma semiconductor process;
• measuring respective second characteristics of the first plurality of substrates proximate to respective edges of the first plurality of substrates, the second characteristics being formed by the plasma semiconductor process;
• by a processor-based system, determining second process conditions to be applied while performing the plasma semiconductor process on a second plurality of substrates based on the first characteristics and the second characteristics, the second process conditions corresponding to respective positions of the plurality of discrete segments disposed at respective tilt angles relative to a top surface of a substrate during the plasma semiconductor process on the second plurality of substrates;
• and
• performing the plasma semiconductor process having the second process conditions on the second plurality of substrates using the processing tool.