Back to results
US 2026/0140315 A1Published application
Method and Structure for High Precision Silicon Nitride Photonics Devices
AssigneeNewport Fab, LLC dba Tower Semiconductor Newport Beach
InventorsEdward Preisler, Riichiro Mitsuhashi
Life of this patent
Estimating the term…
Abstract
In fabricating a semiconductor structure, a silicon nitride (SiN) layer is formed using atomic layer deposition (ALD). A SiN photonics device is formed from the SiN layer. The SiN photonics device is optically coupled to another device. A thickness of the SiN layer can be greater than or approximately equal to one hundred nanometers (100 nm). The SiN photonics device can be a multiplexer or a demultiplexer.
Claims20
A method comprising:
- forming a first silicon nitride (SiN) layer using atomic layer deposition (ALD);
- forming a first SiN photonics device from said first SiN layer;
- wherein said first SiN photonics device is optically coupled to another device.
A method comprising:
- forming a first silicon nitride (SiN) layer using atomic layer deposition (ALD);
- forming a multiplexer or a demultiplexer from said first SiN layer, said multiplexer or said demultiplexer comprising cascaded Mach-Zehnder interferometers (MZIs).
A semiconductor structure comprising:
- a first silicon nitride (SiN) photonics device comprising an atomic layer deposited silicon nitride having a thickness greater than or approximately equal to one hundred nanometers (100 nm);
- said first SiN photonics device being optically coupled to another device.
Dependencies are inferred from the claim text.