Substrate processing method and substrate processing apparatus

A substrate processing apparatus, comprising:

• a holder to hold and rotate a substrate on which silicon, which is to serve as a channel region of a transistor, is formed;
• a liquid supply to supply an oxidizing aqueous solution containing a hydrogen peroxide solution and an alkaline liquid to the substrate held by the holder;
• and
• control circuitry configured to control the holder and the liquid supply to process a surface of the silicon formed on the substrate with the oxidizing aqueous solution to form an oxide film on the surface of the silicon before a gate insulating film of the transistor is formed.

A non-transitory computer-readable medium storing instructions that, when executed by a processor, cause the processor to perform operations comprising:

• controlling a holder to hold and rotate a substrate on which silicon, which is to serve as a channel region of a transistor, is formed;
• controlling a liquid supply to supply an oxidizing aqueous solution containing a hydrogen peroxide solution and an alkaline liquid to the substrate to process a surface of the silicon and form an oxide film on the surface of the silicon;
• and
• forming a gate insulating film of the transistor on a surface of the oxide film.