Compositions and methods for vapor phase surface modification
AssigneeFujifilm Electronic Materials U.S.A., Inc.
InventorWilliam A. Wojtczak
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Abstract
This disclosure provides surface treatment compositions and methods for use thereof. In some embodiments, the compositions are dispersed onto the surface of a substrate in a vapor phase. In some embodiments, the compositions are dispersed onto the surface of the substrate in a liquid phase.
Claims24
A surface treatment composition comprising:
- at least one silylating agent;
- at least one ketone;
- at least one organic anhydride;
- and
- at least one solvent.
(canceled)
The composition of claim 19, wherein the ketone is a diketone.
The composition of claim 19, wherein the ketone is a monoketone.
(canceled)
A method for treating a semiconductor substrate having a pattern disposed on a surface of the substrate, comprising:
- contacting the surface of the substrate with a surface treatment composition, wherein the composition is dispersed onto the surface of the substrate in the vapor phase, wherein the composition comprises at least one silylating agent, at least one solvent, and at least one catalyst,
- wherein the surface treatment composition forms a surface treatment layer on the surface such that the surface has a water contact angle of at least about 50 degrees;
- and
- wherein the pattern comprises a feature having a dimension of at most about 20 nm.
A method for treating a semiconductor substrate having a pattern disposed on a surface of the substrate, comprising:
- contacting the surface of the substrate with a surface treatment composition, wherein the composition is dispersed onto the surface of the substrate in the vapor phase, wherein the composition comprises:
- at least one silylating agent;
- at least one ketone;
- at least one organic anhydride;
- and
- at least one solvent.
-24. (canceled)
-30. (canceled)
Dependencies are inferred from the claim text.