Light-Emitting Device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiromitsu KIDO, Nobuharu OHSAWA, Takeyoshi WATABE
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiromitsu KIDO, Nobuharu OHSAWA, Takeyoshi WATABE
Estimating the term…
A light-emitting device having high reliability is provided. A light-emitting device is provided, which includes a first electrode formed over an insulating surface, a second electrode facing the first electrode, and an EL layer positioned between the first electrode and the second electrode. One of the first and second electrodes is an anode, and the other is a cathode. The EL layer includes a light-emitting layer, a first layer, and a second layer. The first and second layers are positioned between the light-emitting layer and the cathode. The first layer is positioned between the first electrode and the second layer. The second layer is positioned between the first layer and the second electrode. The GSP_Slope (mV/nm) of the second layer is larger than the GSP_Slope (mV/nm) of the first layer (note that the GSP_Slope (mV/nm) is represented by ΔV/Δd where ΔV (mV) is the amount of change in surface potential and Δd (nm) is the amount of change in thickness).
A light-emitting device comprising:
A light-emitting device comprising:
Dependencies are inferred from the claim text.