Reference current generator for non-volatile memory

A reference current generator for a non-volatile memory, the reference current generator comprising:

• a first transistor, wherein a source terminal of the first transistor receives a first supply voltage, a drain terminal of the first transistor is connected with a first node, and a gate terminal of the first transistor is connected with a second node;
• a second transistor, wherein a source terminal of the second transistor receives the first supply voltage, a drain terminal of the second transistor is connected with a third node, and a gate terminal of the second transistor is connected with the third node;
• a first resistor, wherein a first terminal of the first resistor is connected with the third node, and a second terminal of the first resistor is connected with the second node;
• and
• a first mirroring circuit, wherein an input terminal of the first mirroring circuit receives an input current, a first mirrored terminal of the first mirroring circuit is connected with the second node, and a second mirrored terminal of the first mirroring circuit is connected with the first node, wherein the first mirrored terminal of the first mirroring circuit generates a first mirroring current, the second mirrored terminal of the first mirroring circuit generates a second mirroring current, and there is a first proportional relationship between the input current, the first mirroring current and the second mirroring current;
• wherein the first transistor and the second transistor are operated in a saturation mode, and the first transistor generates a saturation current,
• wherein the reference current generator outputs a first reference current, and the first reference current is equal to the saturation current minus the second mirroring current.